DMP2035U new product p-channel enhancem ent mode mosfet features ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected up to 3kv ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plasti c, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram below ? weight: 0.008 grams (approximate) ordering information (note 4) part number qualification case packaging DMP2035U-7 commercial sot23 3000 / 7? tape & reel DMP2035Uq-7 automotive sot23 3000 / 7? tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. ? 2. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. marking information date code key year 2009 2010 2011 2012 2013 2014 2015 code w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view internal schematic to p view ? d g s source gate protection diode gate drain mp3 = product type marking code ym = date code marking y = year (ex: w = 2009) m = month (ex: 9 = september) mp3 ym sot23 esd protected to 3kv product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss -20 v gate-source voltage v gss 8 v continuous drain current (note 5) steady state t a = +25c t a = +70c i d -3.6 -2.9 a pulsed drain current (note 6) i dm -24 a thermal characteristics characteristic symbol value unit power dissipation (note 5) p d 0.81 w thermal resistance, junction to ambient @t a = +25c r ja 153.5 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -20 - - v v gs = 0v, i d = -250 a zero gate voltage drain current t j = +25c i dss - - -1.0 a v ds = -20v, v gs = 0v gate-source leakage i gss - - 10 a v gs = 8v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) -0.4 -0.7 -1.0 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds(on) - 23 30 41 35 45 62 m v gs = -4.5v, i d = -4.0a v gs = -2.5v, i d = -4.0a v gs = -1.8v, i d = -2.0a forward transfer admittance |y fs | - 14 - s v ds = -5v, i d = -4a diode forward voltage v sd - -0.7 -1.0 v v gs = 0v, i s = -1a dynamic characteristics input capacitance c iss - 1610 - pf v ds = -10v, v gs = 0v f = 1.0mhz output capacitance c oss - 157 - pf reverse transfer capacitance c rss - 145 - pf gate resistance r g - 9.45 - v ds = 0v, v gs = 0v, f = 1mhz total gate charge q g - 15.4 - nc v gs = -4.5v, v ds = -10v, i d = -4a gate-source charge q g s - 2.5 - nc gate-drain charge q g d - 3.3 - nc turn-on delay time t d ( on ) - 16.8 - ns v ds = -10v, v gs = -4.5v, r l = 10 ? , r g = 6.0 ? , i d = -1a turn-on rise time t r - 12.4 - ns turn-off delay time t d ( off ) - 94.1 - ns turn-off fall time t f - 42.4 - ns notes: 3. device mounted on fr-4 pcb wi th 2 oz. copper and test pulse width t # 10s. 4. repetitive rating, pulse width limited by junction temperature. 5. short duration pulse test used to minimize self-heating effect. sales@twtysemi.com 2 of 2 http://www.twtysemi.com DMP2035U product specification
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